The Global Power Electronics Market 2026-2036: WBG Semiconductors Transforming the Industry, Vertical Integration Reshaping the Supply Chain – ResearchAndMarkets.com

DUBLIN–(BUSINESS WIRE)–The “The Global Power Electronics Market 2026-2036” has been added to ResearchAndMarkets.com’s offering.

The global power electronics market is projected to grow with a CAGR exceeding 8%, adding over $15 billion by 2030, driven by electric mobility expansion, renewable energy deployment, and digital infrastructure needs.

The Global Power Electronics Market 2026-2036 offers comprehensive analysis of this evolving industry, focusing on the shift to WBG technologies like SiC MOSFETs and GaN HEMTs. The report provides granular 10-year forecasts, examining segments such as EV inverters and data center power supply units. It explores critical technology trends, including the transition to higher voltage EV architectures and the 150mm to 200mm SiC wafer transition.

Regional market analysis covers growth across China, Europe, North America, Japan, South Korea, and emerging markets, while competitive landscape assessment offers market share rankings and M&A activity tracking. The report includes over 90 detailed company profiles, spanning semiconductor manufacturers, GaN specialists, and system integrators.

Market Trends

Power electronics is no longer confined to specialist applications. Its influence now spans electric vehicles, renewable energy systems, industrial automation, data-center infrastructure, and advanced consumer equipment. These sectors share a common objective: enhancing energy efficiency and achieving higher power densities.

The global power electronics market is witnessing remarkable growth, driven by transportation electrification, renewable energy expansion, and increasing data center infrastructure demand. This dynamic sector involves vital components that convert and control electrical power in various applications, such as electric vehicle powertrains and grid-scale energy storage systems. A significant technological shift is occurring from traditional silicon-based devices to wide bandgap (WBG) semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN). This shift marks the most substantial advancement in power electronics since the introduction of IGBTs in the 1980s. SiC MOSFETs offer notable advantages, including higher temperature operation, superior thermal conductivity, and faster switching speeds, potentially extending electric vehicle range by up to 7%.

The electric vehicle sector is a major growth driver for power electronics demand. Key components like traction inverters, onboard chargers (OBCs), and DC-DC converters are increasingly adopting 800V architectures, enhancing fast charging and efficiency. SiC MOSFETs are gaining market share in EV inverters, with projections indicating they’ll dominate by 2035. GaN devices are making strides in lower-power applications such as onboard chargers, thanks to their high-frequency switching capabilities, leading to reductions in size and weight.

Significant supply chain restructuring is underway, with vertical integration emerging as a strategic trend. Automotive OEMs and semiconductor suppliers secure supply through acquisitions, partnerships, and in-house development of SiC capabilities. The transition from 150mm to 200mm SiC wafers is a critical milestone, enhancing production capacity and reducing costs. Chinese manufacturers have aggressively entered the market, with four ranking among the top 20 global power device suppliers.

Data centers are another rapidly expanding application, propelled by AI workloads demanding unprecedented power levels. Power supply units are evolving to meet stringent efficiency standards, with wide bandgap adoption accelerating. Hybrid designs combining silicon, SiC, and GaN are preferred for maximizing efficiency across various power conversion stages.

The industry is evolving from discrete converter designs to integrated system-level approaches, emphasizing energy management over simple power conversion. “Power Electronics 2.0” incorporates smart grid integration, distributed control architectures, and efficiency metrics. Multi-cell converter architectures are gaining traction, offering advantages like switching frequency multiplication and improved redundancy.

While WBG technologies advance rapidly, silicon devices retain significant market share due to their maturity and cost advantages. The market is highly competitive, especially in price-sensitive segments like solar inverters.

Key Topics Covered

CHAPTER 1: EXECUTIVE SUMMARY

1.1 Report Introduction and Scope

1.2 Key Findings and Market Highlights

1.3 Global Power Electronics Market Overview 2026-2036

1.4 Technology Evolution: From Silicon to Wide Bandgap

1.5 Market Size and Growth Projections Summary

1.6 Regional Market Analysis Overview

1.7 Key Market Drivers and Challenges

1.8 Strategic Recommendations

CHAPTER 2: MARKET OVERVIEW AND DEFINITIONS

2.1 Power Electronics Fundamentals

2.1.1 What is Power Electronics?

2.1.2 Key Applications and End Markets

2.1.3 Power Conversion Technologies Overview

2.2 Market Segmentation Framework

2.2.1 By Product Type (Inverters, Converters, Rectifiers)

2.2.2 By Semiconductor Material (Si, SiC, GaN)

2.2.3 By Application Sector

2.2.4 By Voltage Class

2.3 Performance Indices and Metrics

2.3.1 Power Density (kW/dm³)

2.3.2 Efficiency and Loss Analysis

2.3.3 Cost per kW Trends

2.3.4 Reliability and Failure Rate Metrics

CHAPTER 3: TECHNOLOGY ANALYSIS

3.1 Evolution of Power Electronics Technology

3.1.1 Historical Development: SCRs to WBG

3.1.2 Technology S-Curve Analysis

3.1.3 Paradigm Shift to Power Electronics 2.0

3.2 Silicon-Based Power Devices

3.2.1 Silicon IGBT Technology and Performance

3.2.2 Silicon MOSFET Applications

3.2.3 Super-Junction Technology Advances

3.2.4 Si Device Roadmap and Limitations

3.3 Silicon Carbide (SiC) Technology

3.3.1 SiC Material Properties and Advantages

3.3.2 SiC MOSFET Technology Development

3.3.3 SiC vs Si IGBT Performance Comparison

3.3.4 SiC Device Packaging Evolution

3.3.5 150mm to 200mm Wafer Transition

3.3.6 SiC Cost Reduction Roadmap

3.4 Gallium Nitride (GaN) Technology

3.4.1 GaN Material Properties and Potential

3.4.2 GaN HEMT and FET Technologies

3.4.3 GaN-on-Si vs Alternative Substrates

3.4.4 GaN Voltage Limitations and Solutions

3.4.5 GaN Device Roadmap for Automotive

3.5 Converter Topology Analysis

3.5.1 Multi-Cell Converter Architectures

3.5.2 Parallel and Series Interleaving

3.5.3 DC-Transformer Concepts

3.5.4 Three-Level Inverter Designs

3.6 Packaging and Thermal Management

3.6.1 Power Module Packaging Evolution

3.6.2 Single-Sided vs Double-Sided Cooling

3.6.3 Thermal Interface Materials (TIM)

3.6.4 Advanced Packaging Technologies (P4, p²pack)

CHAPTER 4: APPLICATION MARKETS ANALYSIS

4.1 Electric Vehicles (EVs)

4.1.1 EV Market Overview and Growth Trends

4.1.2 Traction Inverter Technologies

4.1.3 Onboard Charger (OBC) Systems

4.1.4 DC-DC Converter Requirements

4.1.5 400V vs 800V Architecture Analysis

4.1.6 Power Electronics Integration Trends

4.1.7 Heavy-Duty Vehicle Applications

4.2 Renewable Energy

4.2.1 Solar PV Inverter Market

4.2.2 Wind Power Converters

4.2.3 Battery Energy Storage Systems (BESS)

4.3 Industrial Applications

4.3.1 Motor Drives and Variable Frequency Drives

4.3.2 Industrial Power Supplies

4.3.3 Welding and Process Equipment

4.4 Data Centers and Computing

4.4.1 Power Supply Unit (PSU) Market

4.4.2 AI Server Power Requirements

4.4.3 48V to 400V Architecture Transition

4.4.4 UPS and Backup Power Systems

4.5 Grid Infrastructure

4.5.1 Smart Grid and Energy Management

4.5.2 Solid-State Transformers

4.5.3 HVDC Transmission Systems

4.6 Consumer Electronics and Telecommunications

4.6.1 Fast Charging Technologies

4.6.2 Telecom Power Systems

CHAPTER 5: REGIONAL MARKET ANALYSIS

5.1 China

5.1.1 Market Size and Growth

5.1.2 Domestic Manufacturing Expansion

5.1.3 SiC Wafer Production Scale-up

5.1.4 Key Chinese Players Analysis

5.2 Europe

5.2.1 Market Overview and Regulations

5.2.2 EU Emissions Targets Impact

5.2.3 European Semiconductor Initiatives

5.3 United States

5.3.1 Market Trends and Policy Drivers

5.3.2 CHIPS Act and Manufacturing Incentives

5.3.3 US-Based Supply Chain Analysis

5.4 Japan and South Korea

5.4.1 Technology Leadership Positions

5.4.2 Automotive OEM Strategies

5.5 Rest of World

5.5.1 India Market Potential

5.5.2 Southeast Asia Manufacturing Hub

CHAPTER 6: SUPPLY CHAIN ANALYSIS

6.1 Silicon Supply Chain

6.1.1 Si Wafer Suppliers

6.1.2 Si IGBT Production Flow

6.1.3 Market Shares and Capacity

6.2 SiC Supply Chain

6.2.1 SiC Raw Materials to Wafers

6.2.2 SiC Wafer Suppliers Global Analysis

6.2.3 SiC MOSFET Manufacturing Process

6.2.4 200mm SiC Wafer Production Roadmap

6.2.5 Vertical Integration Trends

6.3 GaN Supply Chain

6.3.1 GaN Substrate Options and Suppliers

6.3.2 GaN Device Manufacturing

6.3.3 GaN vs Si Manufacturing Comparison

6.4 Packaging and Assembly

6.4.1 Power Module Packaging Supply Chain

6.4.2 Die Attach Technologies

6.4.3 OSAT Providers Analysis

6.5 Passive Components

6.5.1 Capacitor Supply Chain

6.5.2 Magnetic Components

6.5.3 Expected Technology Progress

6.6 Supply Chain Challenges

6.6.1 Chip Shortage Impact Analysis

6.6.2 Geopolitical Considerations

6.6.3 Multi-sourcing Strategies

CHAPTER 7: MARKET FORECASTS 2026-2036

7.1 Global Market Overview

7.1.1 Total Market Size (US$ Billion)

7.1.2 Market Growth by Segment

7.1.3 CAGR Analysis by Technology

7.2 Device-Level Forecasts

7.2.1 Si IGBT Market Forecast

7.2.2 SiC MOSFET Market Forecast

7.2.3 GaN Device Market Forecast

7.2.4 Market Share Transitions: Si vs SiC vs GaN

7.3 Application-Level Forecasts

7.3.1 EV Inverter Forecast (Units, GW, US$)

7.3.2 Onboard Charger Forecast

7.3.3 DC-DC Converter Forecast

7.3.4 Data Center PSU Forecast

7.3.5 Renewable Energy Forecast

7.3.6 Industrial Applications Forecast

7.4 Wafer and Material Forecasts

7.4.1 Si Wafer Market Forecast

7.4.2 SiC Wafer Market Forecast

7.4.3 GaN Substrate Market Forecast

7.5 Regional Forecasts

7.5.1 China Market Forecast

7.5.2 Europe Market Forecast

7.5.3 North America Market Forecast

7.5.4 Asia-Pacific Market Forecast

7.6 Price and Cost Forecasts

7.6.1 Si IGBT vs SiC MOSFET Price Trends

7.6.2 SiC Cost Reduction Projections

7.6.3 GaN Device Pricing Outlook

CHAPTER 8: COMPETITIVE LANDSCAPE

8.1 Market Share Analysis

8.1.1 Top 20 Power Device Suppliers Ranking

8.1.2 Market Share by Technology Segment

8.1.3 Regional Market Share Distribution

8.2 Competitive Strategies

8.2.1 Vertical Integration Approaches

8.2.2 OEM Partnership Models

8.2.3 Technology Licensing Strategies

8.3 Mergers, Acquisitions, and Partnerships

8.3.1 Recent M&A Activity Analysis

8.3.2 Strategic Partnerships Overview

8.3.3 Joint Ventures and Collaborations

8.4 Capacity Expansion Plans

8.4.1 Si Fab Expansion Projects

8.4.2 SiC Manufacturing Investments

8.4.3 GaN Production Scale-up

CHAPTER 9: FUTURE TECHNOLOGY TRENDS

9.1 Power Electronics 2.0 Vision

9.1.1 From Converters to Systems

9.1.2 Energy Management Paradigm

9.1.3 Smart Grid Integration

9.2 Device Technology Roadmap

9.2.1 SiC Technology Evolution

9.2.2 GaN High-Voltage Development

9.2.3 Emerging Materials (Ga₂O₃, Diamond)

9.3 System-Level Innovations

9.3.1 Integrated Power Electronics Modules

9.3.2 Multi-Cell and Modular Architectures

9.3.3 Virtual Prototyping and Digital Twins

9.4 Passives and EMI Challenges

9.4.1 Advanced Magnetic Materials

9.4.2 Capacitor Technology Trends

9.4.3 EMI Reduction Strategies

CHAPTER 10: STRATEGIC OUTLOOK AND CONCLUSIONS

10.1 Market Evolution Summary

10.2 Technology Adoption Timelines

10.3 Investment Opportunities

10.4 Risk Factors and Mitigation

10.5 Key Takeaways and Recommendations

CHAPTER 11: COMPANY PROFILES

11.1 Semiconductor Device Manufacturers (16 company profiles)

11.2 GaN Specialists (11 company profiles)

11.3 SiC Wafer and Material Suppliers (6 company profiles)

11.4 Tier-1 Automotive Suppliers (10 company profiles)

11.5 Automotive OEMs with In-House Development (10 company profiles)

11.6 Chinese Power Electronics Companies (9 company profiles)

11.7 Module and System Integrators (6 company profiles)

11.8 Data Center and Industrial Power (6 company profiles)

11.9 Specialty and Emerging Companies (8 company profiles)

A selection of companies mentioned in this report includes, but is not limited to:

• ABB
• Advanced Electric Machines
• Advanced Energy Industries
• AMETS Power Electronics. BMW
• BorgWarner
• Bosch
• BYD
• Cambridge GaN Devices
• Coherent (II-VI)
• Continental
• CR Micro
• CRRC Corporation
• Dana Incorporated
• Delta Electronics
• Denso
• Diamond Foundry
• Diodes Incorporated
• Dynex Semiconductor
• Eaton
• Efficient Power Conversion (EPC)
• Equipmake
• Fuji Electric
• GaN Systems
• General Motors
• Helix Technologies
• Hitachi Astemo
• Hitachi Energy
• Huawei
• Hyundai Motor Group
• Infineon Technologies

For more information about this report visit https://www.researchandmarkets.com/r/ftaved

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